Eximius ieiunium recuperationem rectifier diode Es1j ex Sina Manufius

Eximius ieiunium recuperationem rectifier diode est semiconductor fabrica quod utilitas in unilateralis conductivity de PN adiunctae ad conversionem alternas vena in pulsante directum current. Cum eligens rectifier diode, in parametri ut maximum rectificium current, maximum vicissim operating current, cut-off frequency, et vicissim recuperatio tempus considerari.

Features

Certification: Rohs
Packaging in Reel
Nam superficies mounted Applications
Minimum Profile Package
Vitrum passivated chip coniunctas
Supilfast Reverse Recuperatio Tempus
Ducere liberum in propinquos meos et EU MMXI / LXV / EU directamenta

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Parameter	Symbola	Es1aw	Es1bw	Es1cw	Es1dw	Es1ew	Es1gw	Es1jw	Unitates
Maximum repetita apicem vicissim voltage	Vrrm	50	100	150	200	300	400	600	V
Maximum RMS voltage	Vrms	35	70	105	140	210	280	420	V
Maximum DC Blocking voltage	VDC	50	100	150	200	300	400	600	V
Maximum mediocris deinceps rectificati current ad TC = CXXV ° C	Si (VULGATE)	1							A
Pecco deinceps surge current 8.3 MS Single Sine Sine unda superimposed on rated onus	Ifsm	30							A
Maximum progredi voltage ad I a	VF	1.0				1.25		1.68	V
Maximum DC Reverse current ta = XXV ° C at Rated DC Blocking voltage ta = CXXV ° C	IR	5 100							μa
Maxime Reverse Recuperatio Tempus (I)	trr	35							ns
Typical coniunctas Capacitance (II)	Cj	15							pf
Typical scelerisque resistentia (III)	Rθja	85							℃ / w
Operating et repono temperatus rhoncus	TJ, TSTG	-55 ~ + CL							℃

(I) metiri cum 0,5 A, IR = I A, IRR = 0.25 A

(II) PCB mounted cum 2.0 'x 2.0 ' (V x V cm) aeris codex areas

Unitas		A	C	D	E	E	g	Qui	∠
mm	max	1.1	0.20	2.9	1.9	1.1	0.9	3.8	VII °
mm	min	0.9	0.12	2.6	1.7	0.8	0.7	3.5
MILL	max	43	7.9	114	75	43	35	150
MILL	min	35	4.7	102	67	31	28	138

Nomen	Sarcina	I est	VRRM V	Ifsm	VF si VF	Si (a)	IR @ VR μa	VR (V)	Trit (NS)
Es1aw	CAD-123fl	1	50	30	1	1	5	50	35
Es1bw	CAD-123fl	1	100	30	1	1	5	100	35
Es1dw	CAD-123fl	1	200	30	1	1	5	200	35
Es1gw	CAD-123fl	1	400	30	1.25	1	5	400	35
Es1jw	CAD-123fl	1	600	30	1.7	1	5	600	35
Es1af	Smaf	1	50	30	1	1	5	50	35
Es1bf	Smaf	1	100	30	1	1	5	100	35
Es1df	Smaf	1	200	30	1	1	5	200	35
Es1gf	Smaf	1	400	30	1.25	1	5	400	35
Es1jf	Smaf	1	600	30	1.7	1	5	600	35
Es2af	Smaf	2	50	50	1	2	5	50	35
Es2bf	Smaf	2	100	50	1	2	5	100	35
Es2df	Smaf	2	200	50	1	2	5	200	35
Es2gf	Smaf	2	400	50	1.25	2	5	400	35
Es2jf	Smaf	2	600	50	1.7	2	5	600	35
Es3af	Smaf	3	50	80	1	3	5	50	35
Es3bf	Smaf	3	100	80	1	3	5	100	35
Es3df	Smaf	3	200	80	1	3	5	200	35
Es3gf	Smaf	3	400	80	1.25	3	5	400	35
Es3jf	Smaf	3	600	80	1.7	3	5	600	35
Es2abf	SMBF	2	50	50	1	2	5	50	35
Es2bbf	SMBF	2	100	50	1	2	5	100	35
Es2dbf	SMBF	2	200	50	1	2	5	200	35
Es2gbf	SMBF	2	400	50	1.25	2	5	400	35
Es2jbf	SMBF	2	600	50	1.7	2	5	600	35
Es3abf	SMBF	3	50	80	1	3	5	50	35
Es3bbf	SMBF	3	100	80	1	3	5	100	35
Es3dbf	SMBF	3	200	80	1	3	5	200	35
Es3gbf	SMBF	3	400	80	1.25	3	5	400	35
Es3jbf	SMBF	3	600	80	1.7	3	5	600	35
Es1a	SMA	1	50	30	1	1	5	50	35
Es1b	SMA	1	100	30	1	1	5	100	35
Es1d	SMA	1	200	30	1	1	5	200	35
Es1g	SMA	1	400	30	1.25	1	5	400	35
Es1j	SMA	1	600	30	1.7	1	5	600	35
Es2a	SMA	2	50	50	1	2	5	50	35
Es2b	SMA	2	100	50	1	2	5	100	35
Es2d	SMA	2	200	50	1	2	5	200	35
Es2g	SMA	2	400	50	1.25	2	5	400	35
Es2j	SMA	2	600	50	1.7	2	5	600	35
Es2ab	AMIS	2	50	50	1	2	5	50	35
Es2bb	AMIS	2	100	50	1	2	5	100	35
Es2db	AMIS	2	200	50	1	2	5	200	35
Es2gb	AMIS	2	400	50	1.25	2	5	400	35
Es2jb	AMIS	2	600	50	1.7	2	5	600	35
Es3ab	AMIS	3	50	80	1	3	5	50	35
Es3bb	AMIS	3	100	80	1	3	5	100	35
Es3db	AMIS	3	200	80	1	3	5	200	35
Es3gb	AMIS	3	400	80	1.25	3	5	400	35
Es3jb	AMIS	3	600	80	1.7	3	5	600	35
Es3ac	SMC	3	50	100	1	3	5	50	35
Es3bc	SMC	3	100	100	1	3	5	100	35
Es3dc	SMC	3	200	100	1	3	5	200	35
Es3gc	SMC	3	400	100	1.25	3	5	400	35
Es3jc	SMC	3	600	100	1.7	3	5	600	35
Es5ac	SMC	5	50	100	1	5	5	50	35
Es5bc	SMC	5	100	100	1	5	5	100	35
Es5dc	SMC	5	200	100	1	5	5	200	35
Es5gc	SMC	5	400	100	1.25	5	5	400	35
Es5jc	SMC	5	600	100	1.7	5	5	600	35

Super ieiunium recuperationem rectifier diode Es1j

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