Views 0 Author: Editor Publish Time: 2020-10-05 Origin: Situs
Sicut integratio gradu integrari circubricitates fit altius et altius, et facti sunt magis et magis universa, operating intentione fit inferior et inferior, et requisita environmental stabilitatem et altior.
De una parte, ex excelsis integration internum structuram electronic apparatu, planum resistunt intentione et oercurrent resistentia apparatu reducitur et facultatem resistere overvoltage et oercurrent reducitur. In alia manu, propter incrementum in signum fons semitas, quod ratio est magis vulnerable overcurrure et overcurrent intrusionem.
Ob augendae competition in telecommunications et industriae imperium industria, in demanda pro summus reliability network apparatu provisum est a telecommunications apparatu amet et communicationis productum amet etiam augeri. Dolonos overvoltage overvoltage et stabilis electricity sunt solent per: fulgur ferit, inductionem fecit per prope filis, directam contactus cum potentia lineas, aut user apparatu defectis. His discrimina, ut periculum telecommunications network apparatu users et sustentationem personas. Igitur telecommunication apparatu amet auxerat apparatu scriptor facultatem resistere overvoltage et oercurrent ad redigendum ratio sustentacionem costs et amplio reliability.
● propinquos meos in Iec61000-4-2 (ESD): Aeris, 15kv, Contact, 8KV
● Conform (EFT), 40a-V / 50NS
● propinquos meos Iec61000-4-5 (Surge) 24a, VIII / 20μs-Level II (Line-Erat) & Level III (Line-Versus)
● Minimum coniunctim capacitance: 3pf typical
● Rohs obsequium
● Simple et convenient consilium
X / 100m Ethernet Portus applicabilis conditionibus: utere a network funem ad coniungere in fabrica quod est minus quam 10m a plene exposita recta fulgur zona
Test Latin: Tu T K.21 (10/700 μs) Impedance (40Ω) differential modus: 1.0kv Common Modus: 6.0kv
| Fabrica lectio | GDT | ESD |
| GDT / smd1812-091 | Esdlc3v0d3 | |
| Sarcina | SMD MDCCCXII | SMD SOD-CCCXXIII |
| Parametri | VIII / 20 Eurou 2Ka current | 3.3v clamping intentione 5.15V |
| Fabrica lectio | GDT | ESD |
| Int3r090l VIII | ESDSRVLC05-4 | |
| D: 5.5mm | Int3r090l, 5.5 | ESDSRVLC05-4 |
Nota: R1 ~ R4 resistentia dicitur BST (Bob Smith Terminal) .the propositum est ut par stultus inter duo paria torta paria, quae est ad signum transmissio et valde adiuvat electro radiation transitum.
| Fabrica lectio | GDT | ESD |
| GDT / smd1812-091 | Esdlc3v0d3b |
Et scheme eligit primo scaena ad a Gdt Gas emundare fluxum fluxum fluxum fluxum current ad terram per switch-genus Gas fluxum fluxum tubo, aut inertes in forma heat.in et inerti, quod inerti sunt in mente et inerti, quod potest absorbet in RELICTUM ESD, quod potest absorbet RELICTU Frequency pars surge et clamping intentione reducitur ad circiter 8v sub IPP, ut ethernet chip est in tutela tuto!
Poe Power, Internationalis IEEE 802,3 Latin Description et Duo Power Rerum
IEEE 802.3af Power Classification PS et PD
| Usurpo | Lowest Power output gradu in Pse | Maximum Power Level in Flashlight apparatu |
| Default | 15.4W | 0.44 ad 12.95 w |
| Libitum | 4.0W | 0.44 ad 3.84 w |
| Libitum | 7.0W | 3,84 ad 6.49 w |
| Libitum | 15.4W | 6.49 ad 12.95 w |
Int.p0640scl + PPTC protegat POE
SMCJ58A + PPTC protegat Poe
Et effectus ex TVs Diodes et Semiconductor missionem tubulis (Thyristor)
