The SMBF packaged series of ultra-fast recovery diodes is optimized for high-power density switching circuits. Covering reverse voltage ratings from 50V to 600V, the ES2ABF supports an average rectified current of 2A, while the ES3ABF increases this to 3A. Peak surge currents reach 50A and 80A, respectively, and can withstand an 8.3ms half-sine wave surge. Glass-passivated junction technology ensures high-temperature stability, resulting in a typical forward voltage drop of 1.0V and a reverse leakage current of 5μA at rated voltage of 125°C. The devices feature a maximum height of 1.3mm and weigh 57mg, making them compatible with high-precision assembly lines.
Offering outstanding thermal management, the ES2ABF series has a thermal resistance of 60°C/W, while the ES3ABF series is optimized to 45°C/W, based on a 5×5cm copper pad. An ultra-fast reverse recovery time of 35ns significantly reduces switching losses, while a low junction capacitance of 28pF suppresses high-frequency interference. The entire series complies with EU RoHS directives and is MIL-STD-750 solder certified. The operating temperature range covers harsh environments from -55°C to +150°C and is suitable for half-wave rectification topologies with resistive or inductive loads. When driving capacitive loads, the rated current must be derated by 20%. Typical applications include high-efficiency scenarios such as photovoltaic inverter freewheeling protection, motor drives, and high-power DC/DC converters.