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Few physical quantities are measured as frequently as temperature; there are various possibilities for measuring temperature by infrared. In addition to traditional thermometers, pyrometers (also known as laser or infrared thermometers) have been effectively validated as temperature measuring instruments. It is widely used in the measurement of surface temperature of various objects such as steel casting, furnace temperature, machine parts, glass and room temperature, body temperature, etc. For special application scenarios, we have intensive products to cooperate with such products to meet various needs.
Advantages ● Extend the service life of the test gun, with over-current protection and over-voltage protection
● Helps reduce test interference, improve stability, and improve product EMC performance
● Improve ASSP performance similar to MLX90614 chip
● Meet IEC 61000-4-2 (ESD）Air discharge: ±15kV Contact discharge: ±8kV
● IEC61000-4-4 (EFT) 40A (5/50ns)
● IEC61000-4-5 (Lightning) 12A (8/20μs)
Application Products
Application Topology
Device and Operating Voltage Selection
| Plan | VDD Externa Power Supply | Overcurrent prevention circuit PPTC | ESD Model No. | Package Form |
| Plan 1 | 3.3V | SMD0603-020 | ESDSR05 ＊Case:JEDEC SOT-143 |  |
| 5.0V | SMD0603-020 | |||
| Plan 2 | 3.3V | SMD0603-020 | ESDLC5V0D3B ＊Case :SOD-323 D1/D2/D3 |  |
| 5.0V | SMD0603-020 | ESDLC5V0D3B ＊Case :SOD-323 D1/D2/D3 |  | |
| 12V | SMD1206-020 | ESDLC12V0D3B ＊Case :SOD-323 D1/D2/D3 |  |
＊ We have a variety of packaging options to choose from, such as：SOD523/SOD-923/DFN1006
Application Notice
● The necessity of overcurrent protection: during the process of normal equipment use and external batteries or power supply replacement, it is easy to generate peak currents, which is fatal to infrared chip A / D acquisition devices; it is also a key design, internal design of infrared sensing zener diode, when the diode PN junction is short-circuited, the battery will be short-circuited; in the petrochemical industry, it will cause a fire and cause greater losses!
● The need for ESD electrostatic protection: The environment in which such products are used is very harsh, mainly due to the instantaneous wide pulse voltage generated by the human body's electrostatic transfer; and in special operating scenarios, the environmental impact is even more uncontrollable.
Products Description
● Protective devices are widely used in automobiles and industrial products with high performance!
● Intensive device volume, SMT type
● Low parasitic capacitance
● ROHS material
Electrical parameters（Ta：25℃)
ESDSR05:
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
| Reverse Stand-off Voltage | VRWM | 5 | v | |||
| Reverse Breakdown Voltage | VBR | It = 1mA | 6 | v | ||
| Reverse Leakage Current | IR | VRWM =5.0V, T=25℃ | 5 | μA | ||
| Clamping Voltage | VC | IPP = 1A, tP = 8/20μs | 9.8 | V | ||
| Clamping Voltage | VC | IPP=10A, tP = 8/20μs | 12 | V | ||
| Junction Capacitance | CJ | VR=0V, f = 1MHz | 0.7 | 2.5 | pF |
ESDLC5V0D3B:
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
| Reverse Stand-off Voltage | VRWM | 6 | 5 | v | ||
| Reverse Breakdown Voltage | VBR | It = 1mA | v | |||
| Reverse Leakage Current | IR | VR =VRWM | 5 | μA | ||
| Clamping Voltage | VC | IPP=1A, tP = 8/20μs | 9.8 | V | ||
| Clamping Voltage | VC | IPP=14A, tP = 8/20μs | 25 | V | ||
| Junction Capacitance | CJ | VR=0V, f = 1MHz | 1 | pF |
