Cur nos postulo compositis semiconductors?

Licet Silicon technology et industriae torquem sunt mature et chip vestibulum sumptus est humilis, in physica proprietatibus de materia terminum suum applicationem in optoelectronics, summus frequency et summus potentia cogitationes et summus frequency et altus-potentia cogitationes et summus frequency et summus potentia cogitationes et summus frequency et altus-potentia cogitationes et altus-frequency et summus potentia cogitationes et altus-frequency et summus potentia cogitationes et summus frequency et altus-potentia cogitationes et summus frequency et altus-potentia cogitationes et altus-frequency et summus potentia cogitationes et summus frequency et altus-potentia cogitationes et altus-frequency et summus potentia cogitationes et summus frequency et summus potentia cogitationes et summus frequency et altus-potentia cogitationes et summus frequency et summus potentia cogitationes et summus frequency et altus-potentia cogitationes et summus frequency et summus potentia cogitationes et summus frequency et summus potentia cogitationes et summus frequency et summus potentia cogitationes et summus frequency et summus potentia cogitationes et summus frequency et summus potentia cogitationes et caliditas cogitationes. Tria generationes semiconductor materiae diversa quae etiam determinat sua commoda et apta diversis application missionibus.

Prima generatione semiconductors includit Silicon et Germania, quae habent angustum indirecte cohortem hiatus et humilis saturatum electronic mobilitatem. Sunt maxime in humilis-voltage, humilis-frequency (de 3GHz), medium et humilis-potentia (de 100W) transistors et detectors. Sunt currently pelagus vestibulum materiae pro semiconductor cogitationes et integrated circuitus; Ex matura industriae torquem et humilis sumptus, in penetratio rate est fere XCV%.

Secundum generationem semiconductors includit Gallium Arsenide, Indium Phosphide, etc., quae directum cohortis hiatus et altius electronic mobilitatem. Sunt late in Satellite communications, mobile communications et GPS navigation agri cum potestate de 100w et frequency de 100ghz. Tamen, Gallii Arsenide Resources sunt relative vix et pretiosa, et materia est toxicus et habet maiorem labefactum in environment. Et penetratio rate est fere I%.

Tertio semiconductors includit Silicon carbide, Gallium Nitride, etc., quae habent commoda magnis bandgap, princeps naufragii electrica agro, princeps scelerisque conductivity, ieiunium electrica satietatem elit. Non potest obviam de requisitis potentia electronics technology in altum temperatus, princeps potentia, altum intentione, altum frequency et radialis resistentia, et penetratio rate est fere V%.

In facto, ut Moore de lege dominatur per Silicon semiconductor materiae gradatim aditus ejus corporis terminum, compositis semiconductors cum excelsum electronic mobilitatem, altum discrimine cohortem, directe, et non expectata est ad unam vias excederet lore est.

With the increasing popularity and widespread application of compound semiconductor devices, new requirements have been put forward for the packaging of compound semiconductor devices and modules due to application needs, such as low loss, low inductance, high power density, high heat dissipation performance, high integration, and multi-functions, which are giving rise to development routes different from silicon device packaging technology and product forms, with the aim of using Advanced packaging technology in occursum superius requisitis dum improving uber reliability.