Sot23 Series Schottky diode

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Sot23 Series Schottky diode

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Schotty (Schottky) Diode quoque notum est ut schotty obice rectis (SBR),), quod est in potentia, in Switching Power Seliconductor cogitat, High Frequency Diode, vel Diode Diode, Proin Communication Circuit sicut rectifier diode, parva signum detector diode.

Sot, XXIII
Pin	Bat54	Bat54a	Bat54c	Bat54s
1	a	K1	A1	A1
2	/	K2	a2	K2
3	K1	a	K1, K2	K1, A2

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Parameter	Symbolum	Limio	Unitas
Pecco Repetita Pecco Reverse Voltage Working Pecco Reverse Voltage DC Blocking voltage	V _rrm V _RWM V _RWM	30	V
Deinceps continua current	Ego _FM	200	MA
Potentia dissipatio	P _d	200	MW
Storage temperatus	T _STG	-55-150	℃

Parameter	Symbolum	Min.	Typ.	Max.	Unitas	Condiciones
Reverse Breakdown Voltage	V _{(BR) R}	30			V	Ego _r= 100μa
	V _F1			0.24	V	Ego _f= 0,1ma
	V _F2			0.32	V	1MA i _f=
	V _F3			0.40	V	Ego _f= 10ma
	V _F4			0.50	V	Ego _f= 30ma
	V _F5			1	V	Ego _f= 100ma
Reverse current	Ego _r			2	μa	V _25v=
Diode capacitance	C _d			10	pf	V _r= 1v, f = 1MHz
Reverse Recuperatio Tempus	T _R			5	ns	I _I= f = 1 10MMAR RR ₌0.1xi, R = 100ΩR L

Parameter	Symbolum	Limio	Unitas
Pecco Repetita Pecco Reverse Voltage Working Peak Reverse Voltage DC Blocking voltage	V _rrm V _RWM V _RWM	30	V
Deinceps continua current	Ego _FM	200	MA
Potentia dissipatio	P _d	200	MW
Storage temperatus	T _STG	-55-150	℃

Parameter	Symbolum	Min.	Typ.	Max.	Unitas	Condiciones
Reverse Breakdown Voltage	V _{(BR) R}	30			V	Ego _r= 100μa
	V _F1			0.24	V	Ego _f= 0,1ma
	V _F2			0.32	V	1MA i _f=
	V _F3			0.40	V	Ego _f= 10ma
	V _F4			0.50	V	Ego _f= 30ma
	V _F5			1	V	Ego _f= 100ma
Reverse current	Ego _r			2	μa	V _25v=
Diode capacitance	C _d			10	pf	V _r= 1v, f = 1MHz
Reverse Recuperatio Tempus	T _R			5	ns	I _I= f = 1 10MMAR RR ₌0.1xi, R = 100ΩR L

Symbolum	Millimeters		Pollices
Symbolum	Min.	Max.	Min.	Max.
A	0.900	1.150	0.035	0.045
A1	0.000	0.100	0.000	0.004
A2	0.900	1.050	0.035	0.041
b	0.300	0.500	0.012	0.020
c	0.080	0.150	0.003	0.006
D	2.800	3.000	0.110	0.118
E	1.200	1.400	0.047	0.055
E1	2.250	2.550	0.089	0.100
E	0.950Type.		0.037Typ.
E1	1.800	2.000	0.071	0.079
L	0.550Ref.		0.022Ref.
L1	0.300	0.500	0.012	0.020
θ θ	0 °	VIII °	0 °	VIII °

Sot23 Series Schottky diode

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Nomen	PD	Vrrm	Si (VULGATE)	Ifrm	Ifsm	VF	IR	Cj
Bta54	225	30	0.2	300	0.6	0,32 0,8	2.0	10
Bat54a	225	30	0.2	300	0.6	0,32 0.8	2.0	10
Bat54c	225	30	0.2	300	0.6	0,32 0.8	2.0	10
Bat54s	225	30	0.2	300	0.6	0,32 0.8	2.0	10