HLP110N06x HLP3205
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HLP110N06x HLP3205

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MOSFET, The metal–oxide–semiconductor field-effect transistor is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET. Another synonym is IGFET for insulated-gate field-effect transistor.


The MOSFET is by far the most common transistor in digital circuits, as billions may be included in a memory chip or microprocessor. Since MOSFETs can be made with either p-type or n-type semiconductors, complementary pairs of MOS transistors can be used to make switching circuits with very low power consumption, in the form of CMOS logic.


Shanghai Yint Electronic Co., Ltd, one of the main manufacturers in China, more than ten years experiences in producing mosfet and supplied our products to thousands of partners. Our products also covers TVS Diode, PPTC, ESD, SBR, MOV, NTC, TSS, GDT, Power Inductors, Wafer, etc.



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