SOD-123FL 3A Series
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SOD-123FL 3A Series

  • Package name: SOD-123FL 
  • Terminals: Solderable per MIL-STD
  • Packaging: in reel
  • Metal silicon junction, majority carrier conduction
  • For surface mounted applications
  • Low power loss, high efficiency
  • High forward surge current capability
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The SOD-123FL 3A Series surface mount Schottky barrier diode features low forward voltage, epitaxial construction with oxide passivation, guard ring for transient and ESD protection, surge overload rating to 100A peak, low power loss, and fast switching. Ideally suited for use in high frequency SMPS, inverters, and as a free-wheeling diode. Its advanced design ensures efficient energy conversion and reliable performance in various electronic applications. With its compact size and robust characteristics, the SR310 diode provides a cost-effective solution for enhancing the efficiency and durability of power supply systems, enabling seamless operation in demanding environments.


Applications:

  • Can be used to prevent reverse polarity problem

  • High-Frequency Inverters

  • Used as a protection device

  • Current flow regulators

  • Polarity Protection applications


※ Disclaimer

Users should verify actual device performance in their specific applications.

Specifications are subject to change without notice.

The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.


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Absolute Maximum Ratings and Electrical characteristics

Ratings at 25℃ ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load, for capacitive load, derate by 20 %

Parameter Symbols DS32 DS34 DS36 DS38 DS310 DS312 DS315 DS320 Units
Maximum Repetitive Peak Reverse Voltage VRRM 20 40 60 80 100 120 150 200 V
Maximum RMS voltage VRMS 14 28 42 56 70 84 105 140 V
Maximum DC Blocking Voltage VDC 20 40 60 80 100 120 150 200 V
Maximum Average Forward Rectified Current IF(AV) 3 A
Peak Forward Surge Current,8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) IFSM 80 A
Max Instantaneous Forward Voltage at 1 A VF 0.55 0.70 0.85 0.95 V
Maximum DC Reverse Current Ta=25℃ at Rated DC Reverse Voltage Ta=100℃ IR 0.5
10
0.3
5
mA
Typical Junction Capacitance1 Cj 250 160 pF
Typical Thermal Resistance2 RθJA 80 ℃/W
Operating Junction Temperature Range Tj -55 ~ +150
Storage Temperature Range Tstg -55 ~ +150

1. Measured at 1 MHz and applied reverse voltage of 4 V D.C

2. P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.


SOD1231

SOD1232

SOD1233 SOD1234


Name VRRM V VRRS V VDC V IF(AV) A IFSM A VF * V IR(MA)25℃ IR(MA)100℃ RθJL* ℃/W Tj℃ Tstg℃
DS32 20 14 20 3 80 0.55 0.5 10 250 80 -55℃~﹢150℃
DS34 40 28 40 3 80 0.55 0.5 10 250 80 -55℃~﹢150℃
DS36 60 42 60 3 80 0.7 0.3 5 160 80 -55℃~﹢150℃
DS38 80 56 80 3 80 0.7 0.3 5 160 80 -55℃~﹢150℃
DS310 100 70 100 3 80 0.85 0.3 5 160 80 -55℃~﹢150℃
DS312 120 84 120 3 80 0.85 0.3 5 160 80 -55℃~﹢150℃
DS315 150 105 150 3 80 0.95 0.3 5 160 80 -55℃~﹢150℃
DS320 200 140 200 3 80 0.95 0.3 5 160 80 -55℃~﹢150℃


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