A Schottky Barrier Rectifier is a metal-semiconductor device fabricated by utilizing a rectifying property of a barrier formed on a metal semiconductor contact surface. This device is suitable for compact and small size systems. Typical for AC-DC and DC-DC converters, battery-polarity protection, multiple voltage ‘ORING’ and other small size systems.
Maximum Ratings and Electrical Characteristics(TA=25℃ unless otherwise noted)
Single Phase,half wave,60HZ,resistive or inductive load.
For capacitive load,derate current by 20%
Symbol
Parameter
Value
Unit
VRRM
Peak Repetitive Reverse Voltage
45
V
VRWM
Working Peak Reverse Voltage
VR
DC Blocking voltage
VR(RMS)
RMS Reverse Voltage
32
V
IO
Average Rectified Output Current(Note1)@TL=90℃
10.0
A
IFSM
Non-repetitive Peak Forward Surge Current @ t=8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) @TL=75℃
275
A
VFM
Forword Voltage Drop @IF=8A,Tj=25℃ @IF=10A,Tj=25℃ @IF=10A,Tj=125℃
0.42 0.47 0.41
V
IRM
Peak Reverse Curren @VF=45V, Tj=25℃ AT Rated DC Blocking Voltage @ VF=45V, Tj=100℃ @VF=45V,Tj=150℃
0.3 15 75
mA
PARM
Repetitive Peak Avalanche Power(1us,25℃)
30000
W
RΘJA
Typical Thermal Resistance Junction to Ambient(Note2) (Note3)
73 31
℃/W
Tj
Operting Temperature Range @VR≤80% VRRM @VR≤50% VRRM DC Forward mode
-65~+150 ≤180 ≤200
℃
Tstg
Storage Temperature
-65~+150
℃
Note:
1.Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case
2.FR-4 PCB,2OZ.Copper,minimum recommended pad layout
3.Polymide PCB,2OZ.Copper.Cathode pad dimensions 18.8mm*14.4mm.Anode pad dimensions 5.6mm*14.4mm
※ Disclaimer
Users should verify actual device performance in their specific applications.
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Maximum Ratings and Electrical Characteristics(TA=25℃ unless otherwise noted)
Single Phase,half wave,60HZ,resistive or inductive load.
For capacitive load,derate current by 20%
Symbol
Parameter
Value
Unit
VRRM
Peak Repetitive Reverse Voltage
45
V
VRWM
Working Peak Reverse Voltage
VR
DC Blocking voltage
VR(RMS)
RMS Reverse Voltage
32
V
IO
Average Rectified Output Current(Note1)@TL=90℃
10.0
A
IFSM
Non-repetitive Peak Forward Surge Current @ t=8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) @TL=75℃
275
A
VFM
Forword Voltage Drop @IF=8A,Tj=25℃ @IF=10A,Tj=25℃ @IF=10A,Tj=125℃
0.42 0.47 0.41
V
IRM
Peak Reverse Curren @VF=45V, Tj=25℃ AT Rated DC Blocking Voltage @ VF=45V, Tj=100℃ @VF=45V,Tj=150℃
0.3 15 75
mA
PARM
Repetitive Peak Avalanche Power(1us,25℃)
30000
W
RΘJA
Typical Thermal Resistance Junction to Ambient(Note2) (Note3)
73 31
℃/W
Tj
Operting Temperature Range @VR≤80% VRRM @VR≤50% VRRM DC Forward mode
-65~+150 ≤180 ≤200
℃
Tstg
Storage Temperature
-65~+150
℃
Note:
1.Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case
2.FR-4 PCB,2OZ.Copper,minimum recommended pad layout
3.Polymide PCB,2OZ.Copper.Cathode pad dimensions 18.8mm*14.4mm.Anode pad dimensions 5.6mm*14.4mm
※ Disclaimer
Users should verify actual device performance in their specific applications.
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.