Future technica breakthroughs in potentia cogitationes

Ut Core components of Electric industria conversionem et circuit potestate electronic cogitationes, potentia semiconductors magna progressionem potentiale in automotive et industriae agros et eorum demanda etiam ortu.

Previously, ad 'MMXXIII Sina Automotive Semiconductor Novum ECOSYNGUS forum ' tenuit in Wuxi, Ding Rongjun, an Academician de Seres Academy of Siconductor Technical et Power of Power et Technical et Applications of Sicond Trends of Power semiconductors in futurum sunt elaborari.

In progressionem de potentia cogitationes promovetur industriae mutationes in industriae agro

Academician Ding Rongjun credit quod potentia Semiconductors sunt 'electricity et electrica ' cpus et potentia semiconductors erit usus quotiens industria est traducitur. Quia mundi primum Germanium-fundatur bipolar Transistor erat inventa per Bell laboratories in Civitatibus Foederatis Americae in MCMXLVII, Era Microelectronics industria coepit.

In visum de Academician Ding Rongjun, in progressionem historiam de global summus celeritate rail est etiam a historia potentia semiconductor technology innovation et industriae progressus. A rectifier Diodes ad Thyristors, Power Electronics technology natus; Rectifier recuperifier recuperifier recuperifier emergentiistors promoveatur ad tempus locomotives Technology; ex thyristors ad GTOS, technicae upgrade a DC agitet ad AC agitet;

Ex GTO ad igbt, Digital Coegi et Imperium fuisse cognovit, quod promoveatur progressionem summus celeritate et gravibus-officium blasphemant transit technology.

Respiciens in progressionem de potentia cogitationes, Academician Ding Rongjun credit: 'ex inventione Germanium materiae ad praesens, in progressionem in electronic technology, quod est aversariis in electronic technology, quod fecit a Formidshatia et in electronic in summa, quod est aversariis et in agro de industriae et in also, et in agro de industriae est in commutationem in electronic in agro et in industriae est in microform et in agro de industriae.

'Tamen, dissimilis digital eu, digital chips persequi provectus vestibulum processus et novum products saepe reponere vetus et applications.Therefore, quod sit difficile ad usum cessum suum et applications.

Igbt est repraesentativum productum de tertia technica revolution of potentia Semiconductor cogitationes

The characteristics of IGBT are voltage drive, high input impedance, small drive current, fast switching frequency, high withstand voltage, application range 600V~6500V, it can be widely used in rail transit, smart grid, new energy, aerospace, ship drive, AC frequency conversion, wind power generation, motor drive, automobile and other industrial fields.

Ex perspective de demanda, novum industria vehicles maxime uti 750v-1200V igbs, cum annua demanda magis quam I decies unitates, showing explosivae incrementum; Rail translationem est maxima demanda agro ad altus-voltage igbs, cum annua demanda de 300.000 unitates; In agro novi industria, ventum virtute converters et photovoltaic inverters maxime uti 1200V-1700v igbt m et h modules, cum annua demanda de 500.000 unitates; 3300V usu 3300V vel malesuada 5500V Crimping Welding et annua postulat de pluribus decem millia.

Nova materiae et novus topologies sunt key semitas futura technicae breakthroughs in potentia cogitationes

Et progressionem potentiae fabrica technology est repulsi ab init necessitates 'emendare perficientur ' et 'reducendo sumptus '. Ideo ad progressionem flecte de potentia semiconductor technology in futurum,

Academician Ding Rongjun credit quod si, secundum materias sunt paulatim appropinquare sua corporis terminum et Moore scriptor legem est accessus ad perficientur terminus, novi materiae et novus topthroughs in potestate et in posterum technological et in potentia semiconductor cogitationes. In futuro, 'nova materiae, novum structurae, novum packaging et intelligentia ' ut animadverto technicae evolutione potentia cogitationes.