The DS12 to DS120 series of ultra-thin Schottky diodes, housed in a miniature SOD-123FL package, are designed specifically for high-frequency, low-power applications. They cover a reverse blocking voltage range of 20V to 200V, maintain a stable output of 1.0A average rectified current at a maximum junction temperature of 125°C, and withstand a peak surge current of 25A. Metal silicon junction technology achieves an ultra-low forward voltage drop of 0.55V-0.90V. Combined with a typical junction capacitance of 110pF and a reverse bias voltage of 4V, this significantly optimizes high-frequency inverter efficiency. These products meet MIL-STD-750 solderability certification, and their tin-plated terminals ensure soldering reliability.
Reverse leakage current is as low as 0.1mA-0.3mA at rated voltage at 25°C, and remains between 2mA-10mA at 100°C. Thermal resistance from junction to ambient reaches 100°C/W, and the operating temperature range extends from -55°C to +125°C. The package features dual-pin anode/cathode markings, a minimal height of 0.65mm, and a compact length of 3.70mm, providing an ideal solution for high-density PCB layouts. It is suitable for low-voltage, high-frequency rectification applications in portable device power management, LED drivers, and communication modules, providing high-reliability semiconductor support for space-constrained scenarios.