In Schottky Diode nominatur post suam inventor, Dr. Schotty (Schottky) et SBD est abbreviationem of Schotty Diode (Schotty Obice Diode, abbreviated as SBD). SBD non est per principium contactus P-genus semiconductor et n-genus semiconductor ad formam pm iunctae, sed per principium metallum, semiconductor adiunctae formatae per contactus metallum et semiconductor. Ideo SBD est etiam vocatur metallum, semiconductor (contactus) diode et superficiem obice Diode, quod est quaedam calidum carrier Diode.
A Schottky diode is a metal-semiconductor device made of a noble metal (gold, silver, aluminum, platinum, etc. A as the positive electrode and an N-type semiconductor B as the negative electrode, and the potential barrier formed on the contact surface of the two has rectification characteristics. Because there are a large number of electrons in the N-type semiconductor and only a small amount of free electrons in the noble metal, the electrons diffuse from B with high concentration to A with low concentration. Obviously, there are no holes in metal A, and there is no diffusion of holes from A to B. As electrons continue to diffuse from B to A, the electron concentration on the surface of B gradually decreases, and the surface electrical neutrality is destroyed, thus forming a potential barrier, and its electric field direction is B→A. Tamen sub actione electrica agri, electrons in voluntate etiam producere pereffluamus a → B, ita debilitatur electrica agri formatae ex diffusione motus. Cum spatium crimen regionem quandam latitudinis statutum electronic electronifel perit motus per electrica agro et electronic electa diffusione motus per diversas concentratione pervenire ad relativum statera formatam pergat.
Schottky diode, etiam notus ut schotty obice Diode (SBD pro brevi), est humilis-potentia, ultra-summus celeritate semiconductor fabrica. Maxime insignes pluma est quod vicissim convaluisset tempus est maxime brevis (potest esse quod parva sicut pauci nanoseconds) et deinceps voltage gutta solum de 0.4V. Est plerumque usus est summus frequency, humilis, voltage, summus current rectifier Diodes, FreeWheeling Diodes et praesidio Diodes. Est etiam utile quod rectificator Diodes et parva-signum detector Diodes in Proin Communication Circuitus. Communior communicatio potentia commeatus, frequency converters, etc.
A typicam applicationem est in switching circuitu Bipolar Transistor BJT, per connectens Shockley Diode ad BJT ad Fibulae, ut transistor est actu prope ad commutationem, cum in in re publica, ita crescente in commutatione, cum in in re publica, ita crescente in commutatione, cum sit in re publica, ita crescente in commutatione, cum sit in in re publica, ita crescente in commutatione, cum in re publica, ita crescente ad commutationem, cum sit in re publica, ita etiam in commutatione, cum sit in re publica, ita etiam in commutatione, cum in re publica, ita augendae in a re publica, ita in in commutatione, ita in hoc quod est in commutatione. Hoc modus est ars in TTL internus circuitus typicam digital ICS ut 74Ls, 74als, 74As, etc.
Maxima pluma of Schotty Diodes est quod deinceps voltage gutta VF relative parva. In casu de eodem current, ejus deinceps voltage gutta est multo minor. Plus habet brevi recuperatio tempore. Etiam habet incommoda, quod resistere voltage est relative humilis et leakage current est leviter maior. Non debet considerari comprehendendo cum eligens.
