 |
| Quantity: | |
|---|---|
DO-214AA
1
200W-600W
9.2-290V
Feature：
Asymmetric TVS diode for gate-level protection of SiC MOS.
The voltage from A1 to A2 is 5V, and the voltage from A2 to A1 is 15V. Since the gate level of the SIC MOS device has a low negative voltage tolerance, the conventional protection circuit requires two TVSs with different voltages, but the SMBJ1505CA launched by our company only requires one.
Maximum Ratings (TA=25℃ unless otherwise noted)
| Parameter | Symbol | Value | Unit |
| Minimum Peak Pulse Power Dissipation (T = 1 ms) | PPK | 600 | Watts |
| Operating Temperature Range | TJ | -55 to +150 | ℃ |
| Storage Temperature Range | TSTG | -55 to +150 | ℃ |
Feature：
Asymmetric TVS diode for gate-level protection of SiC MOS.
The voltage from A1 to A2 is 5V, and the voltage from A2 to A1 is 15V. Since the gate level of the SIC MOS device has a low negative voltage tolerance, the conventional protection circuit requires two TVSs with different voltages, but the SMBJ1505CA launched by our company only requires one.
Maximum Ratings (TA=25℃ unless otherwise noted)
| Parameter | Symbol | Value | Unit |
| Minimum Peak Pulse Power Dissipation (T = 1 ms) | PPK | 600 | Watts |
| Operating Temperature Range | TJ | -55 to +150 | ℃ |
| Storage Temperature Range | TSTG | -55 to +150 | ℃ |
