Sicque potentia cogitationes et altum temperatus e converso bias

SiC (silicon carbide) power devices can effectively meet the requirements of high efficiency, miniaturization, light weight, and high power density of power electronic systems due to their high temperature resistance, high voltage resistance, and low switching loss. Non est quaesivit post novum industria vehicles, photovoltaic potentia generationem, blasphemant transit, dolor eget et aliis agris.

In agro vehicles, quod significant commoda sic potentia cogitationes in industria conversionem efficientiam potest efficaciter auget in puppi range et præcipiens efficientiam electrica vehicles. In addition, sic cogitationes inferior on-resistentia, minor chip magnitudine, et altius operating frequency, quae potest facere electrica vehicles accommodare magis complexuros driving conditionibus. Cum emendationem de sic cede et reductionem sumptus, in installed facultatem in sic potentia cogitationes in novam industria vehicles mos proventus significantly, et in demanda in microform in auctuosum progressionem in vehicles et etiam in a leapfrog progressionem.

In praesens, in verbis de global industriae layout de Sic, Civitatibus Foederatis Americae, Europa, et Iaponia formatae in tres-potentia situ. However, compared with the first-generation and second-generation semiconductor materials, the global third-generation semiconductor industry is still in the early stage of development, and the gap between the domestic and mainstream SiC industry not big，it provides an opportunity for the domestic three-and-a-half-generation industry to overtake on a bend and enter the high-end industry chain of semiconductor components.

High Temperatus Reverse Bias Test de SIC Power Fabrica:

I. Testissimi Partes of High Top Consevers Bias Test

In summa temperatus adversa bias test est simulare in fabrica opus ad summum vicissim bias intentione vel certa vicissim bias intentione in stabilis vel stabilis re publica modus studere in vita simulatione in tempore. Etiam aliqua manufacturers mos utor is ut core test de prima vel secunda protegendo.

 

II. Test Conditions ad High Temperatus Reverse Bias

Et principalis test signa ad altum temperatus adversa Bias de discrete cogitationes includit Mil-std-DCCL Modum MXXXVIII, JesD22-A108, GJB 128a-MCMXCVII Modum MXXXVIII, AEC-Q1010 Tabula II B1 Item, AEC-Q1010 Tabula II B1 Item, AEC-Q101 Tabula II B1 Item, AEC-Q1010 Tabula II B1 Item, AEC-Q101 Tabula II B1 Item, AEC-Q1010 Tabula II B1 et Electrical Expertus, et Test modi et principiis non multum aliarum. Inter eos, in requisitis de ordinationibus sunt maxime restrictius, currere 1000H sub C% vicissim bias intentione.

Nam sic potentia cogitationes, maximam rated adiunctae temperatus est fere supra CLXXV ° C, et vicissim Deserta bias intentione exceditur 650v. Superiore temperatus et fortius electrica agro accelerare diffusio et migratio mobile iones aut impudicitiis in passivation layer.in hoc modo, fabrica abnormalities potest deprehendi in antecessum.

III. Processus magna temperatus in Temperatus Vicis Bias Test de SIC cogitationes

In summus temperatus lacus current de Sic Diodes est plerumque 1-100 μa, dum ad leakage current de Sic Diodes in altus-temperatus e converso bias probat est solet relative parva, in gradu 0.1-10 μa. Leakage potest etiam crescere in tempore, si fabrica est deficiens. Hoc requirit a realis-vicis, summus praecisione Leakage Cras System ad providere Cras data de Leakage current per test exolvuntur ad observe statum in fabrica.

IV. Quam ad altum temperatus e converso bias test?

In summus temperatus e converso bias test maxime examines material, structuram et packaging reliability de fabrica, quod potest reflectunt infirmitatem vel degradationem effectus ex fabrica scriptor ora terminatio, passivation accumsan, et internecectum structuram.

Igitur potestas potestatem machinam potest transire summus temperatus adversa bias test considerans periculum ex productum consilio scaena, et comprehendendo considerans senescit effectus electrica agri et altum temperatus materiae, structuras et passiones. In ipsa applicationem environment factores requirere integrated administratione et imperium materialis lectio, structuram constructione consilium, et amplio cede rate.