
The maximum reverse leakage current is 600µA at Vrwm = 5.80V and room temperature (25°C). At 85°C ambient, the leakage current increases to approximately 3-5mA due to the exponential temperature dependence of silicon junction leakage. At 125°C, leakage can reach 10-15mA. These values are typical for 600W TVS diodes and should be considered in high-temperature, low-standby-power designs.